vishay ILD223T document number 83648 rev. 1.3, 20-apr-04 vishay semiconductors www.vishay.com 1 i179042 a1 c 2 a3 c4 8c 7e 6c 5e optocoupler, photodarlington output, dual channel, soic-8 package features ? two channel optocoupler high current transfer ratio at i f = 1.0 ma, 500 % min. isolation test voltage, 3000 v rms electrical specifications similar to standard 6-pin coupler compatible with dual wave, vapor phase and ir reflow soldering soic-8 surface mountable package standard lead spacing, .05 " available only on tape and reel (conforms to eia standard 481-2) agency approvals ul - file no. e52744 system code y description the ild233t is a high current transfer ratio (ctr) optocoupler. it has a gallium arsenide infrared led emitter and silicon npn photodarlington transistor detector. this device has ctrs tested at an led current of 1.0 ma. this low drive current permits easy interfac- ing from cmos to lsttl or ttl. the ILD223T is constructed in a standard soic - 8 a foot print which makes it ideally suited for high density applications. in addition to eliminating through hole requirements, this package conforms to standards for surface mounted devices. order information for additional information on the available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause per manent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input part remarks ILD223T ctr > 500 %, soic-8 parameter test condition symbol value unit peak reverse voltage v r 6.0 v peak pulsed current 1.0 s, 300 pps 3.0 a continuous forward current per channel 30 ma power dissipation p diss 45 mw derate linearly from 25 c 0.4 mw/c
www.vishay.com 2 document number 83648 rev. 1.3, 20-apr-04 vishay ILD223T vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 30 v emitter-collector breakdown voltage bv eco 5.0 v power dissipation per channel p diss 75 mw derate linearly from 25c 3.1 mw/c parameter test condition symbol value unit total package dissipation ( 2 leds + 2 detectors, 2 channels) p tot 240 mw derate linearly from 25c 2.0 mw/c storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c soldering time at 260c t sld parameter test condition symbol min ty p. max unit forward voltage i f = 1.0 ma v f 1.3 v reverse current v r = 6.0 i r 0.1 100 a capacitance v f = 0 v, f = 1.0 mhz c o 25 pf parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 10 abv ceo 30 v emitter-collector breakdown voltage i c = 10 abv eco 5.0 v collector-emitter leakage current v ce = 5.0 v, i f = 0 i ceo 50 na collector-emitter capacitance v ce = 5.0 v c ce 3.4 pf parameter test condition part symbol min ty p. max unit saturation voltage, collector- emitter i f = 1.0 ma, i ce = 0.5 ma ILD223T v cesat 1.0 v capacitance (input-output) ILD223T c io 0.5 pf resistance, input to output ILD223T r io 100 g ? isolation test voltage t = 1.0 sec. ILD223T v io 3000 v rms
vishay ILD223T document number 83648 rev. 1.3, 20-apr-04 vishay semiconductors www.vishay.com 3 current transfer ratio switching characteristics typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit dc current transfer ratio i f = 1.0 ma, v ce = 5.0 v ctr dc 500 % parameter test condition part symbol min ty p. max unit turn-on time v cc = 10 v, r l = 100 ? , i f = 5.0 ma ILD223T t on 15 s turn-off time v cc = 10 v, r l = 100 ? , i f = 5.0 ma ILD223T t off 30 s fig. 1 forward voltage vs. forward current fig. 2 peak led current vs. duty factor, tau iILD223T_01 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 i f - forward current - ma v f - forward voltage - v t a = -55c t a =100c t a = 25c iILD223T_02 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 10000 t -led pulse duration - s if(pk) - peak led current - ma .005 .05 .02 .01 .1 .2 .5 duty factor t df = /t fig. 3 normalized ctr ce vs. led current fig. 4 ctr vs. led current if - led current - ma normalized ctrce normalized to: if = 1 ma, vce = 5 v ta = 25c ta = -20c ta = 25c ta = 50c ta = 70c iILD223T_03 if - led current - ma ctrce - current transfer ratio - % vce=5v ta = -20c ta = 25c ta = 50c ta = 70c iILD223T_04
www.vishay.com 4 document number 83648 rev. 1.3, 20-apr-04 vishay ILD223T vishay semiconductors fig. 5 collector current vs. led current fig. 6 switching schematic fig. 7 switching timing vce = 5 v ta = -20c ta = 25c ta = 50c ta = 70c if - led current - ma ice - collector current - ma iILD223T_05 iILD223T_06 v o r l v cc =10 v i f =5 ma f=10 khz, df=50% iILD223T_07 i f t r v o t d t s t f t phl t plh v th =1.5 v
vishay ILD223T document number 83648 rev. 1.3, 20-apr-04 vishay semiconductors www.vishay.com 5 package dimensions in inches (mm) .036 (.91) .014 (.36) .170 (4.32) .045 (1.14) .260 (6.6) r .010 (.13) .050 (1.27) i178020 iso method a 40 .240 (6.10) .050(1.27) typ. .016 (.41) .004 (.10) .008 (.20) lead coplanarity .001 max. .008 (.20) 7 .120.002 (3.05.05) c l r.010 (.25) max. .040 (1.02) 5 max. pin one i.d. .154.002 (3.91.05) .015.002 (.38.05) .230.002 (5.84.05) .020.004 (.51.10) 2 plcs. .0585.002 (1.49.05) .125.002 (3.18.05)
www.vishay.com 6 document number 83648 rev. 1.3, 20-apr-04 vishay ILD223T vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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